CS3N40A4H Silicon N-Channel Power MOSFET

Huajing Microelectronics

Description

Silicon N-Channel Power MOSFET CS3N40 A4H ○R General .
VDSS 400 V CS3N40 A4H, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 30 W which.

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Datasheet Specifications

Part number: CS3N40A4H
Manufacturer: Huajing Microelectronics
File Size: 195.43 KB
Datasheet: CS3N40A4H-HuajingDiscreteDevices.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of LCD Power and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 10

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📁 Related Datasheet

CS3N40ATH CS3N06AE-G CS3N06AS-G CS3N06AS1-G CS3N120A0R-G CS3N120A3R

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CS3N40A4H Silicon N-Channel Power MOSFET Huajing Microelectronics

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