CS3N40A23 Silicon N-Channel Power MOSFET

Huajing Microelectronics

Description

Silicon N-Channel Power MOSFET ○R CS3N40 A23 General .
VDSS 400 V CS3N40 A23, the silicon N-channel Enhanced ID 2 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TA=25℃) 2.

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Datasheet Specifications

Part number: CS3N40A23
Manufacturer: Huajing Microelectronics
File Size: 245.09 KB
Datasheet: CS3N40A23-HuajingMicroelectronics.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of LCD Power and adaptor. Absolute（TA= 25℃ unless otherwise specified）： Symbol VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg Parameter Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current Ta = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Puls

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📁 Related Datasheet

CS3N40ATH CS3N06AE-G CS3N06AS-G CS3N06AS1-G CS3N120A0R-G CS3N120A3R

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CS3N40A23 Silicon N-Channel Power MOSFET Huajing Microelectronics

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