Datasheet Details
| Part number | CS3N40A23 |
|---|---|
| Manufacturer | Huajing Microelectronics |
| File Size | 245.09 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
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| Part number | CS3N40A23 |
|---|---|
| Manufacturer | Huajing Microelectronics |
| File Size | 245.09 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
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VDSS 400 V CS3N40 A23, the silicon N-channel Enhanced ID 2 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TA=25℃) 2.5 W which reduce the conduction loss, improve switching RDS(ON)TYP 2.8 Ω performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is SOT-223, which accords with the RoHS standard.
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