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CS3N40A23 Datasheet - Huajing Microelectronics

CS3N40A23 Silicon N-Channel Power MOSFET

VDSS 400 V CS3N40 A23, the silicon N-channel Enhanced ID 2 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TA=25℃) 2.5 W which reduce the conduction loss, improve switching RDS(ON)TYP 2.8 Ω performance and enhance the avalanche energy. The transistor can be used in.

CS3N40A23 Features

* l Fast Switching l Low ON Resistance(Rdson≤3.4Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of LCD Power and adaptor. Absolute（TA= 25℃ unless otherwise specified）： Symbol VDS

CS3N40A23-HuajingMicroelectronics.pdf

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Datasheet Details

Part number:

CS3N40A23

Manufacturer:

Huajing Microelectronics

File Size:

245.09 KB

Description:

Silicon n-channel power mosfet.

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