CS3N50B3HY Datasheet, Mosfet, Huajing Microelectronics

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CS3N50B3HY

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Huajing Microelectronics

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📄 Datasheet

Description:

Silicon n-channel power mosfet. VDSS 500 V CS3N50 B3HY, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar PD (TC=25℃) 35 W

✔ CS3N50B3HY Features

l Fast Switching l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanch

✔ CS3N50B3HY Application

Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbo

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CS3N50B3HY Silicon N-Channel Power MOSFET Huajing Microelectronics