Part number:
CS3N50B3HY
Manufacturer:
Huajing Microelectronics
File Size:
200.99 KB
Description:
Silicon n-channel power mosfet.
CS3N50B3HY-HuajingMicroelectronics.pdf
Datasheet Details
Part number:
CS3N50B3HY
Manufacturer:
Huajing Microelectronics
File Size:
200.99 KB
Description:
Silicon n-channel power mosfet.
CS3N50B3HY, Silicon N-Channel Power MOSFET
VDSS 500 V CS3N50 B3HY, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar PD (TC=25℃) 35 W Technology which reduce the conduction loss, improve RDS(ON)Typ 2.4 Ω switching performance and enhance the avalanche energy.
The transistor can be used in variou
CS3N50B3HY Features
* l Fast Switching l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of electron ballast and adaptor. Absolute(Tc= 25℃ unless otherwise specified):
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