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CS3N50B3HY Datasheet - Huajing Microelectronics

CS3N50B3HY Silicon N-Channel Power MOSFET

VDSS 500 V CS3N50 B3HY, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar PD (TC=25℃) 35 W Technology which reduce the conduction loss, improve RDS(ON)Typ 2.4 Ω switching performance and enhance the avalanche energy. The transistor can be used in variou.

CS3N50B3HY Features

* l Fast Switching l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）：

CS3N50B3HY-HuajingMicroelectronics.pdf

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Datasheet Details

Part number:

CS3N50B3HY

Manufacturer:

Huajing Microelectronics

File Size:

200.99 KB

Description:

Silicon n-channel power mosfet.

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