Part number: CS3N50B4
Manufacturer: Huajing Microelectronics
File Size: 230.30KB
Download: 📄 Datasheet
Description: Silicon N-Channel Power MOSFET
VDSS
500 V
CS3N50 B4, the silicon N-channel Enhanced
ID
3A
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (TC=25℃)
35
W
which reduce the conduction loss, improve switching
RDS(ON)
2.5 Ω
performance and enhance the avala.
l Fast Switching
l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:9.5nC) l Low Reverse transfer capacitances(Typical:3.8pF) l 100% Single Pulse avalanch.
Power switch circuit of electron ballast and adaptor.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
.
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