CS3N06AE-G Datasheet - CR Micro

CS3N06AE-G, Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS3N06 AE-G General .
CS3N06 AE-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve sw.

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CS3N06AE-G-CRMicro.pdf

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Datasheet Details

Part number:

CS3N06AE-G

Manufacturer:

CR Micro

File Size:

510.91 KB

Description:

Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（TA= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TA = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanch

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CS3N06AE-G Silicon N-Channel Power MOSFET CR Micro

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