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CS3N20ATH

Silicon N-Channel Power MOSFET

CS3N20ATH Features

* l Fast Switching 200 3 2.5 1.2 l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data: 4.3nC) l Low Reverse transfer capacitances(Typical:5.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specif

CS3N20ATH General Description

CS3N20 ATH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit fo.

CS3N20ATH Datasheet (386.19 KB)

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Datasheet Details

Part number:

CS3N20ATH

Manufacturer:

Huajing Microelectronics

File Size:

386.19 KB

Description:

Silicon n-channel power mosfet.

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CS3N20ATH Silicon N-Channel Power MOSFET Huajing Microelectronics

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