CS3N50B3 Datasheet, Mosfet, Huajing Microelectronics

CS3N50B3 Features

• Mosfet l Fast Switching l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:9.5nC) l Low Reverse transfer capacitances(Typical:3.8pF) l 100% Single Pulse avalanche energy Test Ap

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Part number:

CS3N50B3

Manufacturer:

Huajing Microelectronics

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📄 Datasheet

Description:

Silicon n-channel power mosfet. VDSS 500 V CS3N50 B3, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=

CS3N50B3 Application

• Applications Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS ID IDMa1 VGS EAS a2

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CS3N50B3

Huajing Microelectronics

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