CS3N120A0R-G - Silicon N-Channel Power MOSFET
CS3N120 A0R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization
CS3N120A0R-G Features
* Fast Switching
* Low ON Resistance(Rdson≤6.0Ω)
* Low Gate Charge (Typical Data:19.7 nC)
* Low Reverse transfer capacitances(Typical:2.2 pF)
* 100% Single Pulse avalanche energy Test
* Halogen Free Applications: Electric welder、Inverter. Absolute(TJ= 25℃ unless otherw