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CS3N40A3H Datasheet - Huajing Microelectronics

CS3N40A3H Silicon N-Channel Power MOSFET

VDSS 400 V CS3N40 A3H, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 30 W which reduce the conduction loss, improve switching RDS(ON)TYP 2.8 Ω performance and enhance the avalanche energy. The transistor can be used in variou.

CS3N40A3H Features

* l Fast Switching l Low ON Resistance(Rdson≤3.4Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of LCD Power and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDS

CS3N40A3H-HuajingDiscreteDevices.pdf

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Datasheet Details

Part number:

CS3N40A3H

Manufacturer:

Huajing Microelectronics

File Size:

189.09 KB

Description:

Silicon n-channel power mosfet.

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