CS3N40ATH Datasheet - CR Micro

CS3N40ATH Silicon N-Channel Power MOSFET

VDSS 400 V CS3N40 ATH, the silicon N-channel Enhanced ID 3 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TA=25℃) 1.25 W which reduce the conduction loss, improve switching RDS(ON)TYP 2.8 Ω performance and enhance the avalanche energy. The transistor can be used i.

CS3N40ATH Features

* l Fast Switching l Low ON Resistance(Rdson≤3.4Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of LCD Power and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDS

CS3N40ATH-CRMicro.pdf