CS3N06AS1-G Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R CS3N06 AS1-G General .
CS3N06 AS1-G the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve sw.

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Datasheet Specifications

Part number: CS3N06AS1-G
Manufacturer: CR Micro
File Size: 526.60 KB
Datasheet: CS3N06AS1-G-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（TA= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TA = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanch

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📁 Related Datasheet

CS3N20ATH CS3N25 CS3N40A23 CS3N40A3H CS3N40A4H CS3N50B3

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CS3N06AS1-G Silicon N-Channel Power MOSFET CR Micro

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