CS3N06AS-G Datasheet - CR Micro

CS3N06AS-G Silicon N-Channel Power MOSFET

CS3N06 AS-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a battery protect or in other applications. The package.

CS3N06AS-G Features

* l Fast Switching l Low ON Resistance(Rdson≤ 105mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： LED、electric tools Absolute（TA= 25℃ unless otherwise specified） Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg Drai

CS3N06AS-G-CRMicro.pdf