CS3N120FA9R - Silicon N-Channel Power MOSFET
CS3N120F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization
CS3N120FA9R Features
* l Fast Switching l Low ON Resistance(Rdson≤6.0Ω) l Low Gate Charge (Typical Data:19.7 nC) l Low Reverse transfer capacitances(Typical:2.2 pF) l 100% Single Pulse avalanche energy Test Applications： Electric welder、Inverter. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID ID
