CS3N120FA9R Datasheet - CR Micro

CS3N120FA9R Silicon N-Channel Power MOSFET

CS3N120F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization .

CS3N120FA9R Features

* l Fast Switching l Low ON Resistance(Rdson≤6.0Ω) l Low Gate Charge (Typical Data:19.7 nC) l Low Reverse transfer capacitances(Typical:2.2 pF) l 100% Single Pulse avalanche energy Test Applications： Electric welder、Inverter. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID ID

CS3N120FA9R-CRMicro.pdf