CS3N50B4HY Silicon N-Channel Power MOSFET

Huajing Microelectronics

Description

Silicon N-Channel Power MOSFET CS3N50 B4HY ○R General .
VDSS 500 V CS3N50 B4HY, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W w.

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Datasheet Specifications

Part number: CS3N50B4HY
Manufacturer: Huajing Microelectronics
File Size: 250.13 KB
Datasheet: CS3N50B4HY-HuajingMicroelectronics.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of electron ballast and adaptor Absolute（Tc= 25℃otherwise specified Unless） Symbol Parameter VDSS Drain-to-Source Voltage ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 Continuous Drain Current Continuous Drain Current TC = 100 °C

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CS3N50B4HY Silicon N-Channel Power MOSFET Huajing Microelectronics

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