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CS3N50B4HY Datasheet - Huajing Microelectronics

CS3N50B4HY Silicon N-Channel Power MOSFET

VDSS 500 V CS3N50 B4HY, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 2.4 Ω performance and enhance the avalanche energy. The transistor can be used in va.

CS3N50B4HY Features

* l Fast Switching l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor Absolute（Tc= 25℃otherwise specified Unless） Sym

CS3N50B4HY-HuajingMicroelectronics.pdf

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Datasheet Details

Part number:

CS3N50B4HY

Manufacturer:

Huajing Microelectronics

File Size:

250.13 KB

Description:

Silicon n-channel power mosfet.

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