CS3N50B4HY Datasheet, Power Mosfet, Huajing Microelectronics

Silicon n-channel power mosfet

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Part number:

CS3N50B4HY

Manufacturer:

Huajing Microelectronics

File Size:

250.13 KB

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Description:

Silicon n-channel power mosfet.

VDSS

500 V

CS3N50 B4HY, the silicon N-channel Enhanced ID

3A

VDMOSFETs, is obtained by the self-aligned planar Technology

PD (TC=25℃)

35

W

which reduce the conduction loss, improve switching.

✔ CS3N50B4HY Features

l Fast Switching l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche

✔ CS3N50B4HY Application

Power switch circuit of electron ballast and adaptor Absolute（Tc= 25℃otherwise specified Unless） Symbol

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CS3N50B4HY Silicon N-Channel Power MOSFET Huajing Microelectronics