CS3N90A3H1-G Datasheet (CR Micro) - Silicon N-Channel Power MOSFET

CS3N90A3H1-G, Silicon N-Channel Power MOSFET

VDSS 900 CS3N90 A3H1-G, the silicon N-channel Enhanced ID 3 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 75 which reduce the conduction loss, improve switching RDS(ON)Typ 5 performance and enhance the avalanche energy.

The transistor can be used in various pow

CS3N90A3H1-G Features

* Fast Switching

* Low ON Resistance(Rdson≤5.5Ω)

* Low Gate Charge (Typical Data:16nC)

* Low Reverse transfer capacitances(Typical:6.5pF)

* 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless other