CS3N90A3H1-G Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R CS3N90 A3H1-G General .
VDSS 900 CS3N90 A3H1-G, the silicon N-channel Enhanced ID 3 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 75 which.

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Datasheet Specifications

Part number: CS3N90A3H1-G
Manufacturer: CR Micro
File Size: 927.93 KB
Datasheet: CS3N90A3H1-G-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤5.5Ω)
* Low Gate Charge (Typical Data:16nC)
* Low Reverse transfer capacitances(Typical:6.5pF)

Applications

* Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Volt

CS3N90A3H1-G Distributors

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CS3N90A3H CS3N90A4H CS3N90A8 CS3N90FA9H CS3N20ATH CS3N25

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CS3N90A3H1-G Silicon N-Channel Power MOSFET CR Micro

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