CS3N90A3H

Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS3N90A3H Features

* l Fast Switching l Low ON Resistance(Rdson≤5.5Ω) l Low Gate Charge (Typical Data:16nC) l Low Reverse transfer capacitances(Typical:6.5pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 900 V 3A 75 W 5Ω Applications： Automotive、DC Motor Control and Class D Amplifier. Abso

CS3N90A3H General Description

CS3N90 A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and high.

CS3N90A3H Datasheet (633.19 KB)

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Part number:

CS3N90A3H

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Huajing Microelectronics

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633.19 KB

Description:

Silicon n-channel power mosfet.

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CS3N90A3H Silicon N-Channel Power MOSFET Huajing Microelectronics

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CS3N90A3H Features

CS3N90A3H General Description

Datasheet Details

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