CS3N90A8 Datasheet (Huajing Microelectronics) - Silicon N-Channel Power MOSFET

CS3N90A8, Silicon N-Channel Power MOSFET

CS3N90 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 900 3 80 5.0 the avalanche energy.

The transistor can be used in various power switchi

CS3N90A8 Features

* l Fast Switching l Low ON Resistance(Rdson≤5.5Ω) l Low Gate Charge (Typical Data:16nC) l Low Reverse transfer capacitances(Typical:6.5pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol