4.75V Datasheet | Specifications & PDF Download

D7509/FD7509/ID7509/ED7509 80A 75V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power MOSFETS Used advanced

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AOT472/AOTF472 75V N-Channel MOSFET General Description Product Summary The AOT472 and AOTF472 use a robust technology that is designed to provide

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N-Channel 75V MOSFET Features • 100% Avalanched Tested • Low On-Resistance • Trench Process Technology • Fast Switching • 175°C Operation Temperature

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Linear Voltage Regulator 3.3 V Fixed Output Voltage TLE 4275 V33 Feature Overview • Output voltage 3.3 V ± 2 % • Current capability 400 mA • Stable

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PJP75N75 75V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=11mΩ • Advanced Trench Process Technology • High Density Cell Desig

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Main Product Characteristics VDSS 75V RDS(on) 6.5mohm(typ.) ID 80A Features and Benefits TO-220  Advanced MOSFET process technology  Special

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http://www.fujielectric.com/products/semiconductor/ 7MBR75VN120-50 IGBT Modules IGBT MODULE (V series) 1200V / 75A / PIM Features Low VCE(sat) Com

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http://www.fujielectric.com/products/semiconductor/ 7MBR75VR120-50 IGBT Modules IGBT MODULE (V series) 1200V / 75A / PIM Features Low VCE(sat) Com

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AOD474A 75V N-Channel MOSFET General Description The AOD474A combines advanced trench MOSFET technology with a low resistance package to provide extr

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AOD474B 75V N-Channel MOSFET General Description The AOD474B combines advanced trench MOSFET technology with a low resistance package to provide extr

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Interference Suppression Capacitor MOLDED BOX CONSTRUCTION, SUPPRESSION CAPACITOR, RADIAL LEAD FEATURES • UL, CSA, VDE, CQC, CE, ENEC APPROVALS • “X2”

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NV Series: 4 - 6W DC/DC Converters 9-36V, 18-36V, 36-72V & 16-75V Inputs 3.3V, 5.0V, 12V, 15V, ±5.0V, ±12V, ±15V & ±24V Outputs Product Specification

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NV Series: 4 - 6W DC/DC Converters 9-36V, 18-36V, 36-72V & 16-75V Inputs 3.3V, 5.0V, 12V, 15V, ±5.0V, ±12V, ±15V & ±24V Outputs Product Specification

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6 IGBT V 6th Gen. IGBT Module V-series A compact design allows for greater power output · High performance 6th gen. IGBT/FWD chipset · Tj(max.)=17

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http://www.fujielectric.com/products/semiconductor/ 6MBP75VDA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 75A / IPM Features • Temperature

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BSC036NE7NS3 G MOSFET OptiMOSTM3 Power-Transistor, 75 V Features • Optimized technology for synchronous rectification • Ideal for high frequency swit

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Interference Suppression Capacitor MOLDED BOX CONSTRUCTION, SUPPRESSION CAPACITOR, RADIAL LEAD FEATURES • UL, CSA, VDE, CQC, CE, ENEC APPROVALS • “X2”

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Interference Suppression Capacitor MOLDED BOX CONSTRUCTION, SUPPRESSION CAPACITOR, RADIAL LEAD FEATURES • UL, CSA, VDE, CQC, CE, ENEC APPROVALS • “X2”

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