4444 Datasheet | Specifications & PDF Download

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Intel StrataFlash® Embedded Memory (P30) 1-Gbit P30 Family Datasheet Product Features ■ High performance ■ Security — 85/88 ns initial access — On

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Intel StrataFlash® Embedded Memory (P30) 1-Gbit P30 Family Datasheet Product Features ■ High performance ■ Security — 85/88 ns initial access — On

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1N4444 General Purpose Silicon Rectifier DO−35 Type Package Absolute Maximum Ratings: Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . .

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FEATURES nn AEC-Q100 Qualified for Automotive Applications nn Bootstrap Supply Voltage to 114V nn Wide VCC Voltage: 7.2V to 13.5V nn Adaptive Shoot-Th

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FEATURES n Bootstrap Supply Voltage to 114V n Wide VCC Voltage: 4.5V to 13.5V n Adaptive Shoot-Through Protection n 1.4A Peak Top Gate Pull-Up Current

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AO4444 N-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = 30V ID = 20A (VGS = 10V)

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AO4444L 80V N-Channel MOSFET SDMOS TM General Description The AO4444L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) wi

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1N4444 High-reliability discrete products and engineering services since 1977 SWITCHING RECTIFIER FEATURES  Available as “HR” (high reliability) s

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HMS4444B N-Channel Super Trench Power MOSFET Description The HMS4444B uses Super Trench technology that is uniquely optimized to provide the most eff

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® T NT ODUC E PR PLACEME r at T E L O e E t S R n B e O ED tC MEND al Suppor il.com/tsc M O C ic E rs NO R ouData TechnSheet w.inte t r SIL or ww c a

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HMS4444A N-Channel Super Trench Power MOSFET Description The HMS4444A uses Super Trench technology that is uniquely optimized to provide the most eff

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www.DataSheet4U.com EM MICROELECTRONIC - MARIN SA EM4444 512 bit, Read/Write UHF Identification Device Description The EM4444 is used in passive UHF

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Standard Products ACT4444 Transceiver for MIL-STD-1553 / MACAIR in a Chipscale Package Preliminary October 1, 2003 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ Transceiv

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® T NT ODUC E PR PLACEME r at T E L O e E t S R n B e O ED tC MEND al Suppor il.com/tsc M O C ic E rs NO R ouData TechnSheet w.inte t r SIL or ww c a

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

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HM4444 N-Channel Enhancement Mode Power MOSFET Description The HM4444 uses advanced trench technology and design to provide excellent RDS(ON) with lo

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19-1543; Rev 0; 10/99 EVALUATIO N KIT AVA ILABLE Ultra-High-Speed, Low-Distortion, Differentialto-Single-Ended Line Receivers with Enable General

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® T NT ODUC E PR PLACEME r at T E L O e E t S R n B e O ED tC MEND al Suppor il.com/tsc M O C ic E rs NO R ouData TechnSheet w.inte t r SIL or ww c a

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® T NT ODUC E PR PLACEME r at T E L O e E t S R n B e O ED tC MEND al Suppor il.com/tsc M O C ic E rs NO R ouData TechnSheet w.inte t r SIL or ww c a

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