HMS4444A Datasheet - H&M Semiconductor

HMS4444A - N-Channel Super Trench Power MOSFET

The HMS4444A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching a

HMS4444A Features

* VDS =80V,ID =17A RDS(ON)=6.8mΩ (typical) @ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Application

* DC/DC Converter

* Ideal for high-frequency switch

Datasheet Details

HMS4444A

H&M Semiconductor

503.33 KB

N-channel super trench power mosfet.

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