Part number:
HMS40N10A
Manufacturer:
H&M Semiconductor
File Size:
844.00 KB
Description:
N-channel super trench power mosfet.
Datasheet Details
The HMS40N10A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
This device is ideal for high-frequency switching
HMS40N10A Features
* VDS =100V,ID =40A RDS(ON) =12mΩ(max @ VGS=10V RDS(ON) =16mΩ(max) @ VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating
* 100% UIS tested Application
* DC/DC Converter
* Ideal
Datasheet Details
HMS40N10A
H&M Semiconductor
844.00 KB
N-channel super trench power mosfet.
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