HMS40N10A Datasheet - H&M Semiconductor

HMS40N10A N-Channel Super Trench Power MOSFET

The HMS40N10A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching .

HMS40N10A Features

* VDS =100V,ID =40A RDS(ON) =12mΩ(max @ VGS=10V RDS(ON) =16mΩ(max) @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Application

* DC/DC Converter

* Ideal

HMS40N10A-HMSemiconductor.pdf

HMS40N10A Datasheet Preview — Preview of HMS40N10A PDF

Datasheet Details

Part number:

HMS40N10A

Manufacturer:

H&M Semiconductor

File Size:

844.00 KB

Description:

N-channel super trench power mosfet.

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HMS40N10A HMS40N10A N-Channel Super Trench Power MOSFET H&M Semiconductor

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