HMS4260 Datasheet - H&M Semiconductor

HMS4260 N-Channel Super Trench Power MOSFET

The HMS4260 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching an.

HMS4260 Features

* VDS =60V,ID =20A RDS(ON)=4.0mΩ (typical) @ VGS=10V RDS(ON)=4.6mΩ (typical) @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Schematic diagram HMS4260 Marking a

HMS4260-HMSemiconductor.pdf