HMS4260 Datasheet - H&M Semiconductor

HMS4260, N-Channel Super Trench Power MOSFET

HMS4260 N-Channel Super Trench Power MOSFET .
The HMS4260 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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Datasheet Details

Part number:

HMS4260

Manufacturer:

H&M Semiconductor

File Size:

446.77 KB

Description:

N-Channel Super Trench Power MOSFET

Features

* VDS =60V,ID =20A RDS(ON)=4.0mΩ (typical) @ VGS=10V RDS(ON)=4.6mΩ (typical) @ VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature
* Pb-free lead plating
* 100% UIS tested Schematic diagram HMS4260 Marking a

HMS4260 Distributors

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HMS4260 N-Channel Super Trench Power MOSFET H&M Semiconductor

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