Part number:
HMS4260
Manufacturer:
H&M Semiconductor
File Size:
446.77 KB
Description:
N-channel super trench power mosfet.
The HMS4260 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
This device is ideal for high-frequency switching an
HMS4260 Features
* VDS =60V,ID =20A RDS(ON)=4.0mΩ (typical) @ VGS=10V RDS(ON)=4.6mΩ (typical) @ VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature
* Pb-free lead plating
* 100% UIS tested Schematic diagram HMS4260 Marking a
Datasheet Details
HMS4260
H&M Semiconductor
446.77 KB
N-channel super trench power mosfet.
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