Part number:
HMS4296
Manufacturer:
H&M Semiconductor
File Size:
455.86 KB
Description:
N-channel super trench power mosfet.
Datasheet Details
The +06 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
This device is ideal for high-frequency switching an
HMS4296 Features
* VDS =100V,ID =12A RDS(ON)=9.9mΩ (typical) @ VGS=10V RDS(ON)=11.5mΩ (typical) @ VGS=4.5V Schematic diagram
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature
* Pb-free lead plating
* 100% UIS tested Marking and p
Datasheet Details
HMS4296
H&M Semiconductor
455.86 KB
N-channel super trench power mosfet.
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