HMS40N10KA Datasheet - H&M Semiconductor

HMS40N10KA - N-Channel Super Trench Power MOSFET

The HMS40N10KA uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching

HMS40N10KA Features

* VDS =100V,ID =40A RDS(ON) =12mΩ(max @ VGS=10V RDS(ON) =16mΩ(max) @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Application

* DC/DC Converter

* Ideal

Datasheet Details

HMS40N10KA

H&M Semiconductor

807.25 KB

N-channel super trench power mosfet.

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