HMS40N65T Datasheet - H&M Semiconductor

HMS40N65T 650V N-Channel Super Junction MOSFET

HMS40N65T Features

* Very Low FOM (RDS(on) X Qg)

* Extremely low switching loss

* Excellent stability and uniformity

* 100% Avalanche Tested

* Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 40 68 75 Unit V A mΩ nC Application

Datasheet Details

HMS40N65T

H&M Semiconductor

407.41 KB

650v n-channel super junction mosfet.

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