HMS4438 Datasheet - H&M Semiconductor

HMS4438 N-Channel Super Trench Power MOSFET

The HMS4438 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching an.

HMS4438 Features

* VDS =60V,ID =10A RDS(on)＜15mΩ（at VGS=10V） RDS(on)＜19mΩ（at VGS=4.5V）

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Schematic diagram HMS4438 Marking and pin assignment

HMS4438-HMSemiconductor.pdf