MJD45H11G (ON Semiconductor)
Complementary Power Transistors
Complementary Power Transistors
DPAK for Surface Mount Applications
MJD44H11 (NPN), MJD45H11 (PNP)
Designed for general purpose power and switching s
(52 views)
MJD45H11T4-A (ST Microelectronics)
(MJD44H11T4-A / MJD44H11T4-A) Complementary power transistors
www.DataSheet4U.com
MJD44H11T4-A MJD45H11T4-A
Complementary power transistors
Features
■ ■ ■ ■
.
The devices are qualified for automotive applicat
(51 views)
MJD45H11 (Inchange Semiconductor)
Silicon PNP Power Transistor
isc Silicon PNP Power Transistors
DESCRIPTION ·Low Collector-Emitter Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Comple
(48 views)
MJF45H11 (ON)
Complementary Power Transistors
MJF44H11 (NPN), MJF45H11 (PNP)
Preferred Devices
Complementary Power Transistors
For Isolated Package Applications
. . . for general purpose power am
(44 views)
MJB45H11G (ON Semiconductor)
PNP Transistor
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
Complementary Power Transistors
D2PAK for Surface Mount
Complementary power tra
(43 views)
MJD45H11 (ST Microelectronics)
Complementary power transistors
MJD44H11, MJD45H11
Complementary power transistors
Features
■ Low collector-emitter saturation voltage ■ Fast switching speed ■ Surface-mounting TO-2
(42 views)
MJD45H11 (Motorola)
SILICON POWER TRANSISTORS
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJD44H11/D
Complementary Power Transistors
• • • • • • •
MJD44H11 * PNP MJD45H11 *
*M
(42 views)
MJD45H11 (Fairchild)
PNP Epitaxial Silicon Transistor
MJD45H11 — PNP Epitaxial Silicon Transistor
April 2015
MJD45H11 PNP Epitaxial Silicon Transistor
Features
• General-Purpose Power and Switching such
(41 views)
MJD45H11T4 (STMicroelectronics)
Low voltage complementary power transistors
MJD44H11T4, MJD45H11T4
Datasheet
Low voltage complementary power transistors
Features
TAB
23 1 DPAK
C (2, TAB)
C (2, TAB)
• Low collector-emitter
(40 views)
MJB45H11 (Inchange Semiconductor)
Silicon PNP Power Transistor
isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector-Emitter saturation voltage ·Pb-free package are available ·Fast switching speed ·Minimum
(38 views)
MJD45H11 (Kexin)
Complementary Power Transistors
SMD Type
Transistors
Complementary Power Transistors MJD45H11
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves Fast Switching
(38 views)
MJD45H11 (ON Semiconductor)
Complementary Power Transistors
Complementary Power Transistors
DPAK for Surface Mount Applications
MJD44H11 (NPN), MJD45H11 (PNP)
Designed for general purpose power and switching s
(37 views)
D45H11 (STMicroelectronics)
Complementary power transistors
D44H8 - D44H11 D45H8 - D45H11
Complementary power transistors
Features
■ Low collector-emitter saturation voltage ■ Fast switching speed
Applications
(34 views)
NJVMJB45H11 (ON Semiconductor)
PNP Transistor
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) Complementary Power Transistors
D2PAK for Surface Mount
Complementary power trans
(34 views)
45H11 (ON Semiconductor)
MJD45H11
MJD44H11 (NPN), MJD45H11 (PNP)
Complementary Power Transistors
DPAK for Surface Mount Applications
Designed for general purpose power and switching
(34 views)
D45H11 (Multicomp)
High Power Bipolar Transistor
D44H11, D45H11
High Power Bipolar Transistors
Designed for various specific and general purpose application such as; output and driver stages of ampl
(34 views)
MJD45H11A (nexperia)
8A PNP high power bipolar transistor
MJD45H11A
80 V, 8 A PNP high power bipolar transistor
28 May 2019
Product data sheet
1. General description
PNP high power bipolar transistor in a p
(34 views)
MK45H11 (ST Microelectronics)
VERY FAST CMOS 512/1K/2K x9BiPORT FIFO
(33 views)
MJD45H11 (nexperia)
8A PNP high power bipolar transistor
MJD45H11
80 V, 8 A PNP high power bipolar transistor
28 May 2019
Preliminary data sheet
1. General description
PNP high power bipolar transistor i
(33 views)
MJF45H11 (INCHANGE)
PNP Transistor
isc Silicon PNP Power Transistors
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max.)@ IC= -8A ·Fast Switching Speeds ·Complement
(33 views)