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MJD45H11 - 8A PNP high power bipolar transistor

MJD45H11 Description

MJD45H11 80 V, 8 A PNP high power bipolar transistor 28 May 2019 Preliminary data sheet 1.General .
PNP high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package.

MJD45H11 Features

* High thermal power dissipation capability
* High energy efficiency due to less heat generation
* Electrically similar to popular MJD45H series
* Low collector emitter saturation voltage

MJD45H11 Applications

* Power management
* Load switch
* Linear mode voltage regulator
* Constant current drive backlighting application
* Motor drive
* Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter vol

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