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MJD31C - 3A NPN transistor

MJD31C Description

MJD31C 100 V, 3 A NPN high power bipolar transistor 16 September 2020 Product data sheet 1.General .
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.

MJD31C Features

* High thermal power dissipation capability
* High energy efficiency due to less heat generation
* Electrically similar to popular MJD31 series
* Low collector emitter saturation voltage

MJD31C Applications

* Power management
* Load switch
* Linear mode voltage regulator
* Constant current drive backlighting application
* Motor drive
* Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter vol

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