48-Channel Datasheet | Specifications & PDF Download

AO4801A 30V P-Channel MOSFET General Description Product Summary The AO4801A combines advanced trench MOSFET technology with a low resistance packa

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Chipstar Mciroelectronics Chipstar Micro-electronics CS4863 AB CS4863 ， 5.0V ；THD+N 1.0％，4Ω 2.2W 3Ω2.5Ｗ 。，， 。 CS4863 ，， ，。 CS4863

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PT2348 4.1-Channel Audio Processor with Subwoofer DESCRIPTION The PT2348 is a 4.1CH audio processor designed for Car Audio purpose. Using I2C interfa

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FDS4480 February 2002 FDS4480 40V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve

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APM4828K Features • 30V/12A, RDS(ON) =12mΩ(Max.) @ VGS =10V RDS(ON) =18mΩ(Max.) @ VGS =4.5V • Super High Dense Cell Design • Avalanche Rated • Reliabl

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4803 4803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The 4803 us

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SN74HC4851 SCLS542C – SEPTEMBER 2003 – REVISED JUNE 2024 SN74HC4851 8-Channel Analog Multiplexer/Demultiplexer With Injection-Current Effect Control

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ISL71148M Radiation Tolerant 8-Channel 14-Bit 900/480ksps SAR ADC Datasheet INL Amplitude (dBFS) Description The ISL71148M is a radiation tolerant

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2485 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2485 is N-Channel MOS Field Effe

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E-2 01/99 www.DataSheet4U.com Small Outline (Surface Mount) Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS M

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P-Channel 30 V (D-S) MOSFET Si4483ADY Vishay Siliconix PRODUCT SUMMARY VDS (V) - 30 RDS(on) () 0.0088 at VGS = - 10 V 0.0153 at VGS = - 4.5 V ID

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XPT4890 www.szpth.com 1 Free Datasheet http://www.datasheet4u.com/ XPT4890 www.szpth.com 2 Free Datasheet http://www.d

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CSC4863 CSC4863 。 5 V ， 4 Ω 2.2 W ， 3 Ω 2.5 W ，THD + N 1 %。， ， ， 。 DIP 16 SHUTDOWN GND +OUT A VDD −OUT A −IN A GND +IN A SOP 16 SOP 16W

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFZ48V， IIRFZ48V ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12mΩ ·Enhancement mo

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STW48N60M2-4 Datasheet N-channel 600 V, 60 mΩ typ., 42 A MDmesh M2 Power MOSFET in a TO247‑4 package Gate(4) Driver source (3) 2 34 1 TO247-4 Drain(

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K1848-VB K1848-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.075 at VGS = 10 V 60 0.086 at VGS =

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N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4894 is the N-Channel logic enhancement mode power field effect transistors are produced using hi

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SPN4862 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4862 is the N-Channel logic enhancement mode power field effect transistors are produced

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. HSiliconix incorporated 2N4867 SERIES N-Channel JFETs The 2N4867 Series of n-channel JFETs is designed for sensitive amplifier stages at low to mi

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Analog Switch Applications Interface Applications

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