4800B Datasheet | Specifications & PDF Download

Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.0185 at VGS = 10 V 0.030 at VGS

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AO4800B 30V Dual N-Channel MOSFET General Description The AO4800B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. T

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CD RDS RECEIVER AUTORADIO CD RDS REPRODUCTOR DE CD CON RECEPTOR RDS English Français Español DEH-X6800BT DEH-X6810BT DEH-X4800BT DEH-X4810BT DEH-X

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www.DataSheet4U.com AO4800B, AO4800BL Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4800B/L uses advanced trench

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Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0185 at VGS = 10 V 0.030 at VGS = 4.

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HYB 39S64400/800/160BT(L) 64-MBit Synchronous DRAM www.DataSheet4U.com 64-MBit Synchronous DRAM • High Performance: • Multiple Burst Read with Single

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512kx8-Bit Dynamic RAM HYB 514800BJ -60/-70/-80 Advanced Information • • • 512 288 words by 8-bit organization 0 to 70 ˚C operating temperature Fas

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HYB 39S64400/800/160BT(L) 64-MBit Synchronous DRAM www.DataSheet4U.com 64-MBit Synchronous DRAM • High Performance: • Multiple Burst Read with Single

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