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4GB Datasheet, Features, Application

4GBJ10005 (4GBJ10005 - 4GBJ1010) GLASS PASSIVATED BRIDGE RECTIFIERS

4GBJ10005 thru 4GBJ1010 GLASS PASSIVATED BRIDGE RE.

Samsung
rating-1 49

KLM4G1FEPD-B031 - 4GB eMMC

Hynix
rating-1 31

H27UCG8T2MYR - 64Gb (8192M x 8bit) NAND Flash

Hynix
rating-1 31

H27UCG8T2ATR-BC - 64Gb(8192M x 8bit) Legacy MLC NAND Flash

Hynix Semiconductor
rating-1 31

H9TP32A4GDBCPR - 4GB eNAND (x8) / LPDDR2-S4B 4Gb(x32)

Toshiba
rating-1 30

THGBMBG5D1KBAIL - 4GB density e-MMC

Samsung
rating-1 24

K9F4G08U0F - 4Gb F-die NAND Flash

Toshiba
rating-1 21

THGBM5G5A1JBAIR - 4GB e-MMC Module

Samsung
rating-1 21

K4B4G0446D - 4Gb D-die DDR3 SDRAM

HY ELECTRONIC
rating-1 16

4GBJ1008 - (4GBJ10005 - 4GBJ1010) GLASS PASSIVATED BRIDGE RECTIFIERS

Hynix
rating-1 16

H27UCG8T2BTR-BC - F20 64Gb MLC NAND Flash Memory

Hynix
rating-1 15

H27UCG8T2BYR-BC - 64Gb(8192M x 8bit) MLC NAND Flash

Samsung
rating-1 13

K9K8G08U0D - 4Gb D-die NAND Flash

Micron
rating-1 13

MT29F4G01AAADD - 4Gb x1: SPI NAND Flash Memory

Samsung
rating-1 11

K9F4G08U0D - 4Gb D-die NAND Flash

Hynix
rating-1 11

H9DA4GH4JJAMCR - NAND 4Gb(x16) / mobile DDR 4Gb(x32 2CS)

Microchip
rating-1 10

PIC24FJ1024GB610 - 16-Bit Microcontrollers

Hynix
rating-1 10

H27UCG8T2M - 64Gb (8192M x 8bit) NAND Flash

Samsung
rating-1 10

M391B1G73BH0 - 240pin Unbuffered DIMM based on 4Gb B-die

Samsung
rating-1 10

K9F4G08U0E - 4Gb E-die NAND Flash

HY ELECTRONIC
rating-1 9

4GBJ1010 - (4GBJ10005 - 4GBJ1010) GLASS PASSIVATED BRIDGE RECTIFIERS

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