H5TQ4G43AMR-xxC Datasheet - Hynix Semiconductor

H5TQ4G43AMR-xxC 4Gb DDR3 SDRAM

The H5TQ4G43AMR-xxC, H5TQ4G83AMR-xxC are a 4,294,967,29-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. Hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising an.

H5TQ4G43AMR-xxC Features

* and Ordering Information FEATURES

* VDD=VDDQ=1.5V +/- 0.075V

* Fully differential clock inputs (CK, CK) operation

* Differential Data Strobe (DQS, DQS)

* On chip DLL align DQ, DQS and DQS transition with CK transition

* DM masks write data-in at the both risin

H5TQ4G43AMR-xxC_HynixSemiconductor.pdf