H5TQ4G43BMR-xxC Datasheet - Hynix Semiconductor

H5TQ4G43BMR-xxC 4Gb DDR3 SDRAM

The H5TQ4G43BMR-xxC, H5TQ4G83BMR-xxC are a 4,294,967,296-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. Hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising a.

H5TQ4G43BMR-xxC Features

* and Ordering Information FEATURES

* VDD=VDDQ=1.5V +/- 0.075V

* Fully differential clock inputs (CK, CK) operation

* 8banks

* Average Refresh Cycle (Tcase of 0 oC~ 95 oC)

* Differential Data Strobe (DQS, DQS) - 7.8 µs at 0oC ~ 85 oC - 3.9 µs at 85oC ~ 95 oC

H5TQ4G43BMR-xxC-HynixSemiconductor.pdf