4KV Datasheet | Specifications & PDF Download

P584KVN01.0 Product Specification Rev 1.0 Model Name: P584KVN01.0 Issue Date: 2021/08/16 ( )Preliminary Specifications (＊)Final Specifications Custom

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PD - 91286D POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number IRFY130C IRFY130CM IRFY130C,IRFY130CM 100V, N-CHANNEL HEXFET MOSFET TECHNO

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IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 20A, TC =100°C tSC ≥

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PD-91292D POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number IRFY440C IRFY440CM IRFY440C, IRFY440CM 500V, N-CHANNEL HEXFET MOSFET TECHNOL

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IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 15A, TC = 100°C tsc > 5µs, Tjmax = 175

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Telefon: +49 (0) 6135 931069 Telefax: +49 (0) 6135 931070 www.peak-electronics.de info@peak-electronics.de M1 SERIES P6LU-XXXXE 3KV ISOLATED 1W UNREGU

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LVDS Interface ICs 35bit LVDS Transmitter 35:5 Serializer BU8254KVT No.13057ECT06 ●Description LVDS Interface IC of ROHM Serializer Deserializer

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Telefon: +49 (0) 6135 931069 Telefax: +49 (0) 6135 931070 www.peak-electronics.de info@peak-electronics.de M1 SERIES P6LU-XXXXE 3KV ISOLATED 1W UNREGU

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StrongIRFET™ IRFS7434-7PPbF Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge

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IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 15A, TC = 100°C tsc > 5µs, Tjmax = 175

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CY7C1525KV18 CY7C1512KV18 CY7C1514KV18 72-Mbit QDR® II SRAM Two-Word Burst Architecture 72-Mbit QDR® II SRAM Two-Word Burst Architecture Features ■ S

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CY7C1522KV18, CY7C1529KV18 CY7C1523KV18, CY7C1524KV18 72-Mbit DDR II SIO SRAM 2-Word Burst Architecture 72-Mbit DDR II SIO SRAM 2-Word Burst Architec

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LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo

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LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo

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SHV-24 5.0mA 24kV 100nS-- High Voltage Diodes HVGT High voltage silicon rectifier diodes is made of high quality glass passivated chip and high relia

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www.DataSheet4U.com HDMI Switch ICs BU16006KV, BU16018KV, BU16024KV, BU16027KV No.10063EET01 ●Description These devices control are simple. It requi

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Datasheet Clockless LinkTM Serial Interface Transceiver LSI BU17074KV General Description BU17074KV supports parallel data transmission by ROHM's or

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CY7C1425KV18 CY7C1412KV18 CY7C1414KV18 36-Mbit QDR® II SRAM Two-Word Burst Architecture 36-Mbit QDR® II SRAM Two-Word Burst Architecture Features ■ S

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BU9354KV Optical Discs System LSI for CD player BU9354KV BU9354KV is system LSI for CD player that integrates pre-servo amplifier, signal processing,

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