L2SD2114KVLT3G Datasheet, Transistor, Leshan Radio Company

L2SD2114KVLT3G Features

• Transistor 1) High DC current gain. S-L2SD2114KVLT1G Series hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20

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L2SD2114KVLT3G

Manufacturer:

Leshan Radio Company

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📄 Datasheet

Description:

Npn silicon transistor.

L2SD2114KVLT3G Application

• Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SOT
    – 23 (TO
    

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L2SD2114KVLT3G

Leshan Radio Company

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