L2SD2114KVLT3G Datasheet - Leshan Radio Company

L2SD2114KVLT3G, NPN silicon transistor

Epitaxial planar type LESHAN RADIO COMPANY, LTD.NPN silicon transistor L2SD2114KVLT1G Series z.

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Datasheet Details

Part number:

L2SD2114KVLT3G

Manufacturer:

Leshan Radio Company

File Size:

99.50 KB

Description:

NPN silicon transistor

Features

* 1) High DC current gain. S-L2SD2114KVLT1G Series hFE = 1200 (Typ. ) 2) High emitter-base voltage. VEBO =12V (Min. ) 3 3) Low VCE (sat). VCE (sat) = 0.18V (Typ. ) (IC / IB = 500mA / 20mA) 1 2 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive

Applications

* Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SOT
* 23 (TO
* 236AB) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage VCBO VCEO VEBO Collector current IC Colle

L2SD2114KVLT3G Distributors

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L2SD2114KVLT3G NPN silicon transistor Leshan Radio Company

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