L2SD2114KVLT1G - Epitaxial planar type NPN silicon transistor
L2SD2114KVLT1G Features
* 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) www.DataSheet4U.com3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) Pb-Free package is available. L2SD2114K
* LT1 3 1 2 SOT
* 23 (TO
* 236AB) zAbsolute maximum ratings (Ta