L2SD2114KVLT1G Datasheet, Transistor, Leshan Radio Company

L2SD2114KVLT1G Features

• Transistor 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) www.DataSheet4U.com3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) Pb-Fr

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Part number:

L2SD2114KVLT1G

Manufacturer:

Leshan Radio Company

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109.27kb

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📄 Datasheet

Description:

Epitaxial planar type npn silicon transistor.

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L2SD2114KVLT1G

Leshan Radio Company

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