L2SD2114KVLT1G, L2SD2114KxLT1 Datasheet - Leshan Radio Company

L2SD2114KVLT1G - Epitaxial planar type NPN silicon transistor

L2SD2114KVLT1G Features

* 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) www.DataSheet4U.com3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) Pb-Free package is available. L2SD2114K

* LT1 3 1 2 SOT

* 23 (TO

* 236AB) zAbsolute maximum ratings (Ta

L2SD2114KxLT1_LeshanRadioCompany.pdf

L2SD2114KVLT1G Datasheet Preview — This datasheet PDF includes multiple part numbers: L2SD2114KVLT1G, L2SD2114KxLT1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

L2SD2114KVLT1G, L2SD2114KxLT1

Manufacturer:

Leshan Radio Company

File Size:

109.27 KB

Description:

Epitaxial planar type npn silicon transistor.

Note:

This datasheet PDF includes multiple part numbers: L2SD2114KVLT1G, L2SD2114KxLT1.
Please refer to the document for exact specifications by model.

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L2SD2114KxLT1 Epitaxial planar type NPN silicon transistor Leshan Radio Company