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L2SD2114KWLT3G, L2SD2114KVLT3G NPN silicon transistor

L2SD2114KWLT3G Description

Epitaxial planar type LESHAN RADIO COMPANY, LTD.NPN silicon transistor L2SD2114KVLT1G Series z.

L2SD2114KWLT3G Features

* 1) High DC current gain. S-L2SD2114KVLT1G Series hFE = 1200 (Typ. ) 2) High emitter-base voltage. VEBO =12V (Min. ) 3 3) Low VCE (sat). VCE (sat) = 0.18V (Typ. ) (IC / IB = 500mA / 20mA) 1 2 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive

L2SD2114KWLT3G Applications

* Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SOT
* 23 (TO
* 236AB) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage VCBO VCEO VEBO Collector current IC Colle

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: L2SD2114KWLT3G, L2SD2114KVLT3G. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
L2SD2114KWLT3G, L2SD2114KVLT3G
Manufacturer
Leshan Radio Company
File Size
99.50 KB
Datasheet
L2SD2114KVLT3G-LeshanRadioCompany.pdf
Description
NPN silicon transistor
Note
This datasheet PDF includes multiple part numbers: L2SD2114KWLT3G, L2SD2114KVLT3G.
Please refer to the document for exact specifications by model.

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NPN silicon transistor Leshan Radio Company
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