L2SD2114KWLT3G Datasheet, Transistor, Leshan Radio Company

L2SD2114KWLT3G Features

• Transistor 1) High DC current gain. S-L2SD2114KVLT1G Series hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20

PDF File Details

Part number:

L2SD2114KWLT3G

Manufacturer:

Leshan Radio Company

File Size:

99.50kb

Download:

📄 Datasheet

Description:

Npn silicon transistor.

L2SD2114KWLT3G Application

• Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SOT
    – 23 (TO
    

TAGS

L2SD2114KWLT3G

Leshan Radio Company

📁 Related Datasheet

L2SD2114KWLT1 - Epitaxial planar type NPN silicon transistor (Leshan Radio Company)
LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo.

L2SD2114KWLT1G - Epitaxial planar type NPN silicon transistor (Leshan Radio Company)
LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo.

L2SD2114KVLT1 - Epitaxial planar type NPN silicon transistor (Leshan Radio Company)
LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo.

L2SD2114KVLT1G - Epitaxial planar type NPN silicon transistor (Leshan Radio Company)
LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base vo.

L2SD2114KVLT3G - NPN silicon transistor (Leshan Radio Company)
Epitaxial planar type LESHAN RADIO COMPANY, LTD. NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC current gain. S-L2SD2114KVLT1G.

L2SD1781KQLT1 - Medium Power Transistor (Leshan Radio Company)
LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor (32V, 0.8A) L2SD1781K*LT1.. FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V .

L2SD1781KQLT1G - Medium Power Transistor (Leshan Radio Company)
LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor (32V, 0.8A) L2SD1781K*LT1.. FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V .

L2SD1781KQLT3G - Medium Power Transistor (Leshan Radio Company)
LESHAN RADIO COMPANY, LTD. Medium Power Transistor (32V, 0.8A) L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low V.

L2SD1781KRLT1 - Medium Power Transistor (Leshan Radio Company)
LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor (32V, 0.8A) L2SD1781K*LT1.. FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V .

L2SD1781KRLT1G - Medium Power Transistor (Leshan Radio Company)
LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor (32V, 0.8A) L2SD1781K*LT1.. FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V .