L2SD2114KWLT3G Features
* 1) High DC current gain. S-L2SD2114KVLT1G Series hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 1 2 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive
L2SD2114KVLT3G-LeshanRadioCompany.pdf
Datasheet Details
L2SD2114KWLT3G, L2SD2114KVLT3G
Leshan Radio Company
99.50 KB
Npn silicon transistor.
This datasheet PDF includes multiple part numbers: L2SD2114KWLT3G, L2SD2114KVLT3G.
Please refer to the document for exact specifications by model.
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