L2SD2114KWLT1G, L2SD2114KxLT1 - Epitaxial planar type NPN silicon transistor

Leshan Radio Company

Datasheet Details

Part number	L2SD2114KWLT1G, L2SD2114KxLT1
Manufacturer	Leshan Radio Company
File Size	109.27 KB
Description	Epitaxial planar type NPN silicon transistor
Datasheet	L2SD2114KxLT1_LeshanRadioCompany.pdf
Note	This datasheet PDF includes multiple part numbers: L2SD2114KWLT1G, L2SD2114KxLT1. Please refer to the document for exact specifications by model.

1) High DC current gain. hFE = 1200 (Typ. ) 2) High emitter-base voltage. VEBO =12V (Min. ) www. DataSheet4U. com3) Low VCE (sat). VCE (sat) = 0.18V (Typ. ) (IC / IB = 500mA / 20mA) 4) Pb-Free package is available. L2SD2114K.
LT1 3 1 2 SOT.
23 (TO.
236AB) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage VCBO VCEO VEBO Collector current IC Collector power dissipation Junction temperature Storage temper.

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Published: Aug 11, 2015 |