Part number:
L2SD2114KWLT1G
Manufacturer:
Leshan Radio Company
File Size:
109.27 KB
Description:
Epitaxial planar type npn silicon transistor.
L2SD2114KWLT1G Features
* 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) www.DataSheet4U.com3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) Pb-Free package is available. L2SD2114K
* LT1 3 1 2 SOT
* 23 (TO
* 236AB) zAbsolute maximum ratings (Ta
L2SD2114KWLT1G Datasheet (109.27 KB)
Datasheet Details
L2SD2114KWLT1G
Leshan Radio Company
109.27 KB
Epitaxial planar type npn silicon transistor.
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