L2SD1781KQLT1 - Medium Power Transistor
L2SD1781KQLT1 Features
* 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197K
* LT1 4) Pb Free Package is Available. FStructure Epitaxial planar type NPN silicon transistor FAbsolute maximum ratings (Ta = 25_C) L2SD1781K
* LT1