L2SD1781KRLT3G Features
* 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive and Other Applications Requiring Unique Site
L2SD1781KQLT3G-LeshanRadioCompany.pdf
Datasheet Details
L2SD1781KRLT3G, L2SD1781KQLT3G
Leshan Radio Company
109.83 KB
Medium power transistor.
This datasheet PDF includes multiple part numbers: L2SD1781KRLT3G, L2SD1781KQLT3G.
Please refer to the document for exact specifications by model.
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L2SD1781KRLT3G Distributor
