Part number:
L2SD1781KQLT1G
Manufacturer:
Leshan Radio Company
File Size:
126.11 KB
Description:
Medium power transistor.
L2SD1781KQLT1G Datasheet (126.11 KB)
L2SD1781KQLT1G
Leshan Radio Company
126.11 KB
Medium power transistor.
* 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197K
* LT1 4) Pb Free Package is Available. FStructure Epitaxial planar type NPN silicon transistor FAbsolute maximum ratings (Ta = 25_C) L2SD1781K
* LT1
📁 Related Datasheet
L2SD1781KQLT1 - Medium Power Transistor
(Leshan Radio Company)
LRC
LESHAN RADIO COMPANY,LTD.
Medium Power Transistor (32V, 0.8A) L2SD1781K*LT1..
FFeatures 1) Very low VCE(sat).
VCE(sat) t 0.4 V .
L2SD1781KQLT3G - Medium Power Transistor
(Leshan Radio Company)
LESHAN RADIO COMPANY, LTD.
Medium Power Transistor (32V, 0.8A) L2SD1781KQLT1G
L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series
FFeatures 1) Very low V.
L2SD1781KRLT1 - Medium Power Transistor
(Leshan Radio Company)
LRC
LESHAN RADIO COMPANY,LTD.
Medium Power Transistor (32V, 0.8A) L2SD1781K*LT1..
FFeatures 1) Very low VCE(sat).
VCE(sat) t 0.4 V .
L2SD1781KRLT1G - Medium Power Transistor
(Leshan Radio Company)
LRC
LESHAN RADIO COMPANY,LTD.
Medium Power Transistor (32V, 0.8A) L2SD1781K*LT1..
FFeatures 1) Very low VCE(sat).
VCE(sat) t 0.4 V .
L2SD1781KRLT3G - Medium Power Transistor
(Leshan Radio Company)
LESHAN RADIO COMPANY, LTD.
Medium Power Transistor (32V, 0.8A) L2SD1781KQLT1G
L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series
FFeatures 1) Very low V.
L2SD2114KVLT1 - Epitaxial planar type NPN silicon transistor
(Leshan Radio Company)
LESHAN RADIO COMPANY, LTD.
Epitaxial planar type
NPN silicon transistor
zFeatures 1) High DC current gain.
hFE = 1200 (Typ.) 2) High emitter-base vo.