L2SD1781KRLT1 Features
* 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197K
* LT1 4) Pb Free Package is Available. FStructure Epitaxial planar type NPN silicon transistor FAbsolute maximum ratings (Ta = 25_C) L2SD1781K
* LT1
L2SD1781KxLT1_LeshanRadioCompany.pdf
Datasheet Details
L2SD1781KRLT1, L2SD1781KxLT1
Leshan Radio Company
126.11 KB
Medium power transistor.
This datasheet PDF includes multiple part numbers: L2SD1781KRLT1, L2SD1781KxLT1.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
L2SD1781KRLT1G Medium Power Transistor (Leshan Radio Company)
L2SD1781KRLT3G Medium Power Transistor (Leshan Radio Company)
L2SD1781KQLT1 Medium Power Transistor (Leshan Radio Company)
L2SD1781KQLT1G Medium Power Transistor (Leshan Radio Company)
L2SD1781KQLT3G Medium Power Transistor (Leshan Radio Company)
L2SD2114KVLT1 Epitaxial planar type NPN silicon transistor (Leshan Radio Company)
L2SD2114KVLT1G Epitaxial planar type NPN silicon transistor (Leshan Radio Company)
L2SD2114KVLT3G NPN silicon transistor (Leshan Radio Company)
L2SD1781KRLT1 Distributor
