NEC
MC-4564EC727 - 64M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE
DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4564EC727
64M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
Description
The MC-4564EC727 is a
(10 views)
Elpida Memory
EDJ4204EFBG - 1024M words x 4 bits 4G bits DDR3L SDRAM
COVER
PRELIMINARY DATA SHEET
4G bits DDR3L SDRAM
EDJ4204EFBG (1024M words × 4 bits) EDJ4208EFBG (512M words × 8 bits) EDJ4216EFBG (256M words × 16 b
(10 views)
Hitachi Semiconductor
HM62W4100H - 4M High Speed SRAM (1-Mword x 4-bit)
HM62W4100H Series
4M High Speed SRAM (1-Mword × 4-bit)
ADE-203-774D (Z) Rev. 1.0 Sep. 15, 1998 Description
The HM62W4100H is a 4-Mbit high speed stat
(8 views)
Mitsubishi
M5M4V64S40ATP-8A - 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
SDRAM (Rev.1.3) Mar'98
MITSUBISHI LSIs
M5M4V64S40ATP-8A,-8L,-8, -10L, -10
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
Some of contents ar
(8 views)
Mitsubishi
M5M4V64S40ATP-8L - 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
SDRAM (Rev.1.3) Mar'98
MITSUBISHI LSIs
M5M4V64S40ATP-8A,-8L,-8, -10L, -10
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
Some of contents ar
(8 views)
Elpida Memory
EDD2504AKTA - 256M bits DDR SDRAM (64M words x 4 bits)
( DataSheet : www.DataSheet4U.com )
DATA SHEET
256M bits DDR SDRAM
EDD2504AKTA (64M words × 4 bits)
Description
The EDD2504AK is a 256M bits Double
(8 views)
AMIC Technology
A29DL323 - 32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
A29DL323 Series
32M-Bit CMOS Low Voltage Dual Operation Flash Memory
Preliminary 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
Features
(7 views)
AMIC Technology
A29DL324 - 32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
A29DL324 Series
32M-Bit CMOS Low Voltage Dual Operation Flash Memory
Preliminary 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
Features
(7 views)
Hitachi Semiconductor
HM6216255HI - 4M high Speed SRAM (256-kword x 16-bit)
HM6216255HI Series
4M high Speed SRAM (256-kword × 16-bit)
ADE-203-1037A (Z) Rev. 1.0 Apr. 15, 1999 Description
The HM6216255HI Series is a 4-Mbit hi
(7 views)
Sanyo
LC32464M-80 - 256K (65536 words X 4 bits) DRAM
(7 views)
OKI
MR27T3202F - 2M-Word x 16-Bit or 4M-Word x 8-Bit P2ROM
OKI Semiconductor MR27T3202F
P2ROM2M–Word × 16–Bit or 4M–Word × 8–Bit
FEDR27T3202F-02-04
Issue Date: Jul. 9, 2004
FEATURES
· 2,097,152-word × 16-bi
(7 views)
Mitsubishi
M5M4V64S20ATP-10L - 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
MITSUBISHI LSIs SDRAM (Rev.1.3) Mar98
M5M4V64S20ATP-8A,-8L,-8, -10L, -10
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
Some of contents are s
(7 views)
Mitsubishi
M5M4V64S30ATP-10 - 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
(7 views)
Mitsubishi
M5M4V64S30ATP-8A - 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
MITSUBISHI LSIs SDRAM (Rev.1.3) Mar'98
M5M4V64S30ATP-8A,-8L,-8, -10L, -10
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
Some of contents are
(7 views)
Mitsubishi
M5M4V64S30ATP-8L - 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
MITSUBISHI LSIs SDRAM (Rev.1.3) Mar'98
M5M4V64S30ATP-8A,-8L,-8, -10L, -10
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
Some of contents are
(7 views)
OKI Semiconductor
MR26V25655J - 8M-Word x 32Bit or 64M-Word x 16Bit P2ROM
OKI Semiconductor MR26V25655J
8M–Word × 32–Bit or 16M–Word × 16–Bit Page Mode
FEDR26V25655J-02-05
Issue Date: Jun. 8, 2004
P2ROM
PIN CONFIGURATION (
(7 views)
NEC
UPD444008L - 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD444008L
4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT
Description
The µPD444008L is a high speed, low power, 4,194
(7 views)
OKI electronic componets
MR26V51253L - 32M-Word x 16-Bit or 64M-Word x 8-Bit
www.DataSheet4U.com
OKI Semiconductor MR26V51253L
32M–Word × 16–Bit or 64M–Word × 8–Bit Page Mode
FEDR26V51253L-02-02
Issue Date: APR. 8, 2005
P2RO
(7 views)
NEC
UPD46128953-X - 128M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 32-BIT ADDRESS / DATA MULTIPLEXED EXTENDED TEMPERATURE OPERATION
PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
μPD46128953-X
128M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 32-BIT ADDRESS / DATA MULTIPLEXED EXTENDED
(7 views)
Micron Technology
MT54W4MH8B - SRAM 2-WORD BURST
ADVANCE‡
www.DataSheet4U.com 4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM
36Mb QDR™II SRAM 2-WORD BURST
FEATURES
• DLL c
(7 views)