4N30 Datasheet | Specifications & PDF Download

4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler April 2007 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photoda

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R1114N Series Low Noise 150 mA LDO Regulator for Automotive Applications NO.EC-094-131219 OUTLINE The R1114x Series are CMOS-based voltage regulator I

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METAL OXIDE VARISTOR 14mm Disc Part Number Maximum Allowable Voltage ACrms DC (V) (V) Varistor Voltage (V 1mA) Tolerance (V) Range Maximum UL CSA

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Preliminary Technical Information TrenchTM HiperFETTM Power MOSFETs IXFT94N30T IXFH94N30T VDSS = 300V ID25 = 94A ≤ RDS(on) 36mΩ N-Channel Enhancem

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R1114N Series Low Noise 150 mA LDO Regulator for Automotive Applications NO.EC-094-131219 OUTLINE The R1114x Series are CMOS-based voltage regulator I

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R1114N Series Low Noise 150 mA LDO Regulator for Automotive Applications NO.EC-094-131219 OUTLINE The R1114x Series are CMOS-based voltage regulator I

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4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler April 2007 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photoda

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4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler December 2014 4N29M, 4N30M, 4N32M, 4N33M, H11B1M

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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF14N300 (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings

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UNISONIC TECHNOLOGIES CO., LTD 4N30Z 4A, 300V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The U TC 4N30Z is an N-ch annel mod e p ower MOSF ET

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4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler April 2007 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photoda

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4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photodarlington Optocoupler April 2007 4N29, 4N30, 4N31, 4N32, 4N33 General Purpose 6-Pin Photoda

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 36mΩ(Max) ·Fast Swi

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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA14N300HV IXBT14N300HV IXBH14N300HV VCES = IC110 = VCE(sat)  3000V 14A 2.7

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     QFET  % % % % % % & '( )**+ ,
 - * ./Ω 0+ - 1* + 2      3     )*

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FDB14N30 — N-Channel UniFETTM MOSFET FDB14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features • RDS(on) = 290 m (Max.) @ VGS = 10 V, ID = 7 A

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METAL OXIDE VARISTOR 14mm Disc Part Number Maximum Allowable Voltage ACrms DC Varistor Voltage (V 1mA) Tolerance Maximum Clamping Voltage V 5A UL With

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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA14N300HV IXBT14N300HV IXBH14N300HV VCES = IC110 = VCE(sat)  3000V 14A 2.7

(5 views)