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FDB14N30 - N-Channel MOSFET

Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Features

  • RDS(on) = 290 m (Max. ) @ VGS = 10 V, ID = 7 A.
  • Low Gate Charge (Typ. 18 nC).
  • Low Crss (Typ.17 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.

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Datasheet preview – FDB14N30

Datasheet Details

Part number FDB14N30
Manufacturer Fairchild Semiconductor
File Size 1.10 MB
Description N-Channel MOSFET
Datasheet download datasheet FDB14N30 Datasheet
Additional preview pages of the FDB14N30 datasheet.

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Full PDF Text Transcription

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FDB14N30 — N-Channel UniFETTM MOSFET FDB14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features • RDS(on) = 290 m (Max.) @ VGS = 10 V, ID = 7 A • Low Gate Charge (Typ. 18 nC) • Low Crss (Typ.17 pF) • 100% Avalanche Tested • Improved dv/dt Capability Applications • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
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