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FDB14AN06LA0 - N-Channel MOSFET

Features

  • r DS(ON) = 12.8mΩ (Typ. ), VGS = 5V, ID = 60A.
  • Qg(tot) = 24nC (Typ. ), VGS = 5V.
  • Low Miller Charge.
  • Low QRR Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • Qualified to AEC Q101 Formerly developmental type 83557.

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Datasheet Details

Part number FDB14AN06LA0
Manufacturer Fairchild Semiconductor
File Size 250.04 KB
Description N-Channel MOSFET
Datasheet download datasheet FDB14AN06LA0 Datasheet
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Full PDF Text Transcription

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FDB14AN06LA0 / FDP14AN06LA0 January 2004 FDB14AN06LA0 / FDP14AN06LA0 N-Channel PowerTrench® MOSFET 60V, 60A, 14.6mΩ Features • r DS(ON) = 12.8mΩ (Typ.), VGS = 5V, ID = 60A • Qg(tot) = 24nC (Typ.
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