4N50 Datasheet | Specifications & PDF Download

N-Channel MOSFET Applications: • Adaptor • TV Main Power • LCD Panel Power FTP14N50C FTA14N50C Pb Lead Free Package and Finish VDSS 500V RDS(ON) (M

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MOSFET – N-Channel, UniFETt, FRFET) 500 V, 24 A, 200 mW FDA24N50F Description UniFET MOSFET is onsemi’s high voltage MOSFET family based on planar str

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UNISONIC TECHNOLOGIES CO., LTD 14N50 14A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 14N50 is a N-Channel enhancement mode power MOSFET. The de

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HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q ID25 RDS(on) 500 V 44 A 120 mW 500 V 48 A 100 mW trr £ 250 ns N-Channel Enhancement

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TM www.DataSheet4U.com HiPerFET Power MOSFETs VDSS IXFK / IXFN 44 N50 IXFK / IXFN 48 N50 ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated,

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TM www.DataSheet4U.com HiPerFET Power MOSFETs VDSS IXFK / IXFN 44 N50 IXFK / IXFN 48 N50 ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated,

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N-Channel MOSFET Applications: • Adaptor • TV Main Power • LCD Panel Power FTP14N50C FTA14N50C Pb Lead Free Package and Finish VDSS 500V RDS(ON) (M

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-3 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested

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FQA24N50 — N-Channel QFET® MOSFET June 2014 FQA24N50 N-Channel QFET® MOSFET 500 V, 24 A, 200 mΩ Features • 24 A, 500 V, RDS(on) = 200 mΩ (Max.) @ VG

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UNISONIC TECHNOLOGIES CO., LTD 24N50 Preliminary 24A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 24N50 is an N-channel mode power MOSFET us

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LinearTM Power MOSFET w/ Extended FBSOA IXTH24N50L N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM

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Polar2TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK94N50P2 IXFX94N50P2 VDSS = ID25 = RDS(on) ≤ 50

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • St

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HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Preliminary data VDSS ID25

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FDA24N50 — N-Channel UniFETTM MOSFET FDA24N50 N-Channel UniFETTM MOSFET 500 V, 24 A, 190 mΩ Features • RDS(on) = 160 mΩ (Typ.) @ VGS = 10 V, ID = 12

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HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching Single MOSFET Die IXFX 44N50F IXFK 44N50F VDSS = 500 V ID25 = 44 A RDS(on) = 120 mΩ trr ≤ 250 n

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500V N-Channel MOSFETs PDR04N50 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

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Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT44N50Q3 IXFH44N50Q3 D G S Symbol VDSS VDGR

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