50-W Datasheet | Specifications & PDF Download

www.fairchildsemi.com KA7500B SMPS Controller Features • Internal Regulator Provides a Stable 5V Reference Supply Trimmed to 5% • Uncommitted Output

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community SN65HVD1050A-Q1 SLLS888B – JUNE 2008 – REVISED OCTOBER 2016

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ZMM5221B - ZMM5267B 500mW SURFACE MOUNT ZENER DIODE Features · 500mW Power Dissipation · Outline Similar to JEDEC DO-213AA · Hemetic Glass Package ·

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RBV25005-RBV2510 Silicon Bridge Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 25.0 A Features Rating to 1000V PRV Surge overload rating to 200 Am

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www.eicsemi.com SB5150 ~ SB5200 TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 150 ~ 200 Volts IO : 5.0 A

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AB-5000 EMI Absorber Data Sheet Product Description 3Μ™ AB-5000 Series EMI Absorber consists of flexible soft metal flakes filler in polymer resin wit

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3M™ CF Card Ejector and Latching Retainer for CompactFlash™ Header, Type II, Long Guides ™ • Mounts to 3M’s CompactFlash Type II, Long Guide, Surfa

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Quartz Crystal : SX5032 , SX5032A General description SMD Crystals suitable for any kind of application and realized in AT Cut to get best performance

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2Pai Semi Enhanced ESD, 3.0 kV rms/6.0 kV rms 150Kbps Dual-Channel Digital Isolators Data Sheet FEATURES Ultra low power consumption (150Kbps): 0.

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2Pai Semi Enhanced ESD, 3.0 kV rms/6.0 kV rms 150Kbps Dual-Channel Digital Isolators Data Sheet FEATURES Ultra low power consumption (150Kbps): 0.

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Quartz Crystal : SX5032 , SX5032A General description SMD Crystals suitable for any kind of application and realized in AT Cut to get best performance

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2Pai Semi Enhanced ESD, 3.0 kV rms/6.0 kV rms 150Kbps Dual-Channel Digital Isolators Data Sheet FEATURES Ultra low power consumption (150Kbps): 0.

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A-BRIGHT A-BRIGHT INDUSTRIAL CO., LTD. www.DataSheet4U.com Part No. 5 mm AL-513IR-850-25B Round Diff No.002 Type：LED Lamps „ Package Dimension: N

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Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr

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