50U Datasheet | Specifications & PDF Download

FDPF5N50UT — N-Channel UniFETTM Ultra FRFETTM MOSFET November 2013 FDPF5N50UT 500 V, 4 A, 2 Ω Features N-Channel UniFETTM Ultra FRFETTM MOSFET Desc

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6MBI150U2B-060 IGBT MODULE (U series) 600V / 150A IGBT Modules Features · Low VCE(sat) · Compact Package www.DataSheet4U.com · P.C. Board Mount Mod

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1N8149US – 1N8182US Available Voidless-Hermetically-Sealed Unidirectional 150 W Low-Capacitance Transient Voltage Suppressors DESCRIPTION This seri

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Bulletin PD-20681 09/04 50UQ03G SCHOTTKY RECTIFIER 5.5 Amp IF(AV) = 5.5Amp VR = 30V Major Ratings and Characteristics Characteristics IF(AV) Rectan

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www.DataSheet4U.com PD 91471B IRG4PC50UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for hi

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FDB12N50U N-Channel MOSFET March 2008 FDB12N50U N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features • RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A • Low

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FSB50550U Smart Power Module (SPM®) February 2009 FSB50550U Smart Power Module (SPM®) Features • 500V RDS(on)=1.4Ω(max) 3-phase FRFET inverter inclu

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FSB50550US Smart Power Module (SPM®) February 2009 FSB50550US Smart Power Module (SPM®) Features • 500V RDS(on)=1.4Ω(max) 3-phase FRFET inverter inc

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SPECIFICATION Device Name : IGBT MODULE Type Name : 6MBI450U4-120 Spec. No. : MS5F 6020 Jan. 20 ’05 S.Miyashita Jan. 20 ’05 T.Miyasaka K.Yamada

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SPECIFICATION Device Name : IGBT MODULE Type Name : 2MBI450U4E-120 Spec. No. : MS5F 6057 Mar. 09 ’05 S.Miyashita Mar. 09 ’05 T.Miyasaka K.Yamada

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6MBI50UA-120 IGBT Module U-Series 1200V / 50A 6 in one-package Features Applications · High speed switching · Inverter for Motor drive · Uninter

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POWER DISCRETES 1N6138US thru 1N6173US 1N6139AUS thru 1N6173AUS 1500W Bipolar Transient Voltage Suppressor Surface Mount (US) Description Features

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Genesys Logic, Inc. GL650USB USB 4 PORT HUB CONTROLLER DATA SHEET, Version 1.2 Aug. 18, 2000 Genesys Logic, Inc. 10F, No.11, Ln.3, Tsao Ti Wei, She

Rating: 1 ★ (4 votes)

FDD5N50U — N-Channel UniFETTM Ultra FRFETTM MOSFET FDD5N50U N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 3 A, 2.0 Ω November 2013 Features • RDS(

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FMM7G50US60N FMM7G50US60N Compact & Complex Module IGBT General Description Fairchild IGBT Power Module provides low conduction and switching losse

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FM2G150US60 IGBT FM2G150US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low c

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FMC7G50US60 October 2001 IGBT FMC7G50US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power mo

Rating: 1 ★ (4 votes)

FMG1G50US60H IGBT FMG1G50US60H Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low

Rating: 1 ★ (4 votes)